收藏本站
Si3480
8. Landing Pattern: 20-Pin QFN
Figure 3 illustrates the landing pattern for the Si3480. Table 8 lists the values for the dimensions shown in the
illustration.
Figure 3. QFN-20 Recommended PCB Land Pattern
Table 8. QFN-20 PCB Land Pattern Dimensions
Dimension
C1
C2
E
Min
3.70
3.70
0.50
Max
Dimension
X2
Y1
Y2
Min
2.15
0.90
2.15
Max
2.25
1.00
2.25
X1
0.20
0.30
Notes:
General
1. All dimensions shown are in millimeters (mm) unless otherwise noted.
2. Dimensioning and Tolerancing is per the ANSI Y14.5M-1994 specification.
3. This Land Pattern Design is based on the IPC-7351 guidelines.
Solder Mask Design
4. All metal pads are to be non-solder mask defined (NSMD). Clearance between the solder
mask and the metal pad is to be 60 ? m minimum, all the way around the pad.
Stencil Design
5. A stainless steel, laser-cut and electro-polished stencil with trapezoidal walls should be used
to assure good solder paste release.
6. The stencil thickness should be 0.125 mm (5 mils).
7. The ratio of stencil aperture to land pad size should be 1:1 for all perimeter pins.
8. A 2x2 array of 0.95mm openings on a 1.1 mm pitch should be used for the center pad to
assure the proper paste volume (71% Paste Coverage).
Card Assembly
9. A No-Clean, Type-3 solder paste is recommended.
10. The recommended card reflow profile is per the JEDEC/IPC J-STD-020 specification for Small
Body Components.
Rev. 1.0
11
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI5017-EVB BOARD EVALUATION FOR SI5017
SI5018-EVB BOARD EVALUATION FOR SI5018
SI5020-EVB BOARD EVALUATION FOR SI5020
SI5023-EVB BOARD EVALUATION FOR SI5023
SI5110-EVB BOARD EVALUATION FOR SI5110
SI5320-EVB BOARD EVALUATION FOR SI5320
SI5321-EVB BOARD EVALUATION FOR SI5321
SI5364-EVB BOARD EVALUATION FOR SI5364
相关代理商/技术参数
SI3481DV 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET
SI3481DV_06 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET
SI3481DV-T1-E3 功能描述:MOSFET 30V 5.3A 0.048Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI3481DV-T1-GE3 功能描述:MOSFET 30V 5.3A 2.0W 48mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
Si3482-A01-GM 功能描述:热插拔功率分布 12/24/48-prt Pw Mngr Si3452/3PSE Prt Ctrl RoHS:否 制造商:Texas Instruments 产品:Controllers & Switches 电流限制: 电源电压-最大:7 V 电源电压-最小:- 0.3 V 工作温度范围: 功率耗散: 安装风格:SMD/SMT 封装 / 箱体:MSOP-8 封装:Tube
SI3482-A01-GMR 功能描述:电源开关 IC - POE / LAN 12/24/48-port Power Manager RoHS:否 制造商:Fairchild Semiconductor 开关数量:Single 开关配置:SPST 开启电阻（最大值）:7.3 Ohms 串话: 带宽: 开启时间（最大值）:13 ns 关闭时间（最大值）:20 ns 切换电压（最大）: 工作电源电压:8 V to 26 V 最大工作温度:+ 125 C 安装风格:Through Hole 封装 / 箱体:TO-220F-6
SI3483CDV 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 30-V (D-S) MOSFET
Si3483CDV-T1-E3 功能描述:MOSFET 30V 8.0A 4.2W 34mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube